Family Card - Person Sheet
NameArthur Dreeben 
Birth15 Feb 1922
Death5 Sep 2008
FatherMeyer DREEBEN (1879-1974)
MotherVera Dora Heimann (1881-1957)
Notes for Arthur Dreeben
{geni:about_me} Born in Bronx, New York, and lived in early childhood on Bryant Avenue. From there the family moved to an apartment in Manhattan, a section called Inwood in Washington Heights around 180th or 190th Street on the west side, called Elwood Street, near what is now known as the Cloisters. He recalls the coal delivery trucks, which fascinated Art in childhood. They lived there until around 1927. The family then moved to Brooklyn, which was a first for the family, to 201 Linden Boulevard. The apartment house was divided into four sections around a quadrangle. The family lived in the "C" section, on the second floor in Apartment B17. In 1929, when the factory was closingArt's father made an arrangement with the apartment house management to reduce the rent for a period of time, with the agreement that when things got better, it would be made up. The family moved to the fourth floor. And then moved to another apartment house at 221 Linden Boulevard. This was, Art thought, to get a smaller apartment with lower rent.
He completed his graduate work in Inorganic and Solid State Chemistry and Physics at the Polytechnic Institute of Brooklyn in 1950, after serving with the U.S. Army during World War II. He held a Teaching Fellowship at the Polytechnic and did research on infrared stimulable phosphors. From 1950 to 1953 he was employed as a Research Chemist at the General Electric Research, and the Knolls Atomic Power Laboratories, on the development of analytical and radiochemical procedures. In 1953 he joined the Research Department of the Westinghouse Lamp Division as a Research Engineer. Here he did research in the field of luminescence including high-temperature phosphors, lamp phosphors, and transparent luminescent films.
He joined RCA Laboratories in 1958 as a Member of Technical Staff. He worked on photoconductors, electroluminescence, and problems in crystal growth dislocations and impurity precipitation in semiconductors. The latter work led toa better understanding of impurity behavior by identifying classical precipitate behavior, morphologies, and species in cadmium sulfide single crystals. He has also been concerned with the growth and properties of epitaxial layers of III-V compounds for various transferred-electron microwave devices including GaAs traveling wave transistors, and a novel type of solid state traveling wave amplifier. He developed a process for growing single-crystal sapphire using a CO2 laser, and filaments from the process were made into the first video disc styli. He was also concerned with research and development of the EFG shaping technique for growing single-crystal sapphire ribbons for SOS devices. He later studied the relationships between the crystalline perfection of silicon substrates and the quality of homoepitaxial silicon.
Listed in "American Men and Women of Science", he has been a member of the American Chemical Society, the Electrochemical Society, the American Association for Crystal Growth, Phi Lambda Upsilon and Sigma Xl.
- RCA 1983 Company Biography
Long-time friend of Mad Magazine publisher William Gaines
He completed his graduate work in Inorganic and Solid State Chemistry and Physics at the Polytechnic Institute of Brooklyn in 1950, after serving with the U.S. Army during World War II. He held a Teaching Fellowship at the Polytechnic and did research on infrared stimulable phosphors. From 1950 to 1953 he was employed as a Research Chemist at the General Electric Research, and the Knolls Atomic Power Laboratories, on the development of analytical and radiochemical procedures. In 1953 he joined the Research Department of the Westinghouse Lamp Division as a Research Engineer. Here he did research in the field of luminescence including high-temperature phosphors, lamp phosphors, and transparent luminescent films.
He joined RCA Laboratories in 1958 as a Member of Technical Staff. He worked on photoconductors, electroluminescence, and problems in crystal growth dislocations and impurity precipitation in semiconductors. The latter work led toa better understanding of impurity behavior by identifying classical precipitate behavior, morphologies, and species in cadmium sulfide single crystals. He has also been concerned with the growth and properties of epitaxial layers of III-V compounds for various transferred-electron microwave devices including GaAs traveling wave transistors, and a novel type of solid state traveling wave amplifier. He developed a process for growing single-crystal sapphire using a CO2 laser, and filaments from the process were made into the first video disc styli. He was also concerned with research and development of the EFG shaping technique for growing single-crystal sapphire ribbons for SOS devices. He later studied the relationships between the crystalline perfection of silicon substrates and the quality of homoepitaxial silicon.
Listed in "American Men and Women of Science", he has been a member of the American Chemical Society, the Electrochemical Society, the American Association for Crystal Growth, Phi Lambda Upsilon and Sigma Xl.
- RCA 1983 Company Biography
Long-time friend of Mad Magazine publisher William Gaines